Heatpulse RTP

 
 
 
 

AG Heatpulse 8800 / 8108 RTP

Rapid Thermal Processing (RTP) can be used in a multitude of semiconductor process steps such as post-implant annealing, the growth of oxide and nitride films, reflow, and the formation of silicides, salicides, and metal alloying. In a single-wafer chamber, wafers are rapidly heated and held at a closed-loop controlled temperature.

The Heatpulse 8xxx can process substrates up to 200 mm in diameter, and diverse materials including, but not limited to, silicon, gallium arsenide, silicon carbide (SiC), and other compounds.

Several upgrades to the standard system are available including a second temperature measurement sensing system, the DTC, providing Emissivity insensitivity on substrates with stacked film backsides. Other upgrades include a Nitrogen Curtain to reduce the ingress of air into the processing chamber when the oven door is opened, and an autonomous Oxygen Analyzer upgrade to monitor and control the O2 concentration during wafer processing. Both of these upgrades individually and combined together work to reduce wafer scrap on O2-sensitive processes.

 
 
 
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